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| S T G 8211 S amHop Microelectronics C orp. Oct. 27. 2005 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( mW ) Max ID 10A R DS (ON) S uper high dense cell design for low R DS (ON). 13.5 @ V G S = 4.0V 18 @ V G S = 2.5V R ugged and reliable. S urface Mount P ackage. E S D P rotected. T S S OP D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 D1 D2 G1 G2 (T OP V IE W) S1 S2 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ TJ=25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol VDS VGS ID IDM IS PD TJ, TS TG Limit 20 12 10 40 1.7 1.5 -55 to 150 Unit V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 85 C /W 1 S T G 8211 E LE CTR ICAL CHAR ACTE R IS TICS (TA = 25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) R DS (ON) gFS CISS COSS CRSS c S ymbol Condition VGS = 0V, ID = 250uA VDS = 16V, VGS = 0V VGS = 12V,VDS = 0V VDS = VGS, ID = 250uA VGS = 4V, ID = 5A VGS =2.5V, ID = 3A VDS = 5V, ID =5A Min Typ C Max Unit 20 1 10 0.5 0.8 11 13.5 22 1815 406 255 1.5 13.5 18 V uA uA V m ohm m ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance Forward Transconductance S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance VDS =8V, VGS = 0V f =1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VDD = 10V, ID = 1A, VGEN = 4V, R L = 10 ohm R GE N = 10 ohm VDS =10V, ID = 5A, VGS =4V 31 62 96 40 19 3.5 6.7 ns ns ns ns nC nC nC 2 S T G 8211 E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted) Parameter S ymbol Condition Min Typ C Max Unit 0.75 1.2 V DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Diode Forward Voltage VGS = 0V, Is =1.7A VSD Notes a.Surface Mounted on FR4 Board, tO10sec. b.Pulse Test:Pulse WidthO300gs, Duty Cycle O 2%. c.Guaranteed by design, not subject to production testing. 25 V G S =4V 15 -55 C 12 20 ID, Drain C urrent (A) 15 ID, Drain C urrent (A) V G S =2.5V 9 10 V G S =1.5V 6 125 C 3 0 25 C 0 0.3 0.6 0.9 1.2 1.5 1.8 5 0 0 0.5 1 1.5 2 2.5 3 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 24 F igure 2. Trans fer C haracteris tics 2.5 R DS (ON), On-R es is tance Normalized 20 2.2 1.9 1.6 1.3 1.0 0 V G S =4V ID=5A V G S =2.5V ID=3A R DS (on) (m W) 16 12 V G S =2.5V V G S =4V 8 4 0 0 5 10 15 20 25 0 25 50 75 100 125 150 T j( C ) ID, Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 3 S T G 8211 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 V DS =V G S ID=250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 ID=250uA T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 30 125 C 25 75 C 20 15 10 5 0 20.0 ID=5A Is , S ource-drain current (A) 10.0 25 C R DS (on) (m W) 25 C 125 C 75 C 0 2 4 6 8 1.0 0.2 0.4 0.6 0.8 1.0 1.2 V G S , G ate-S ource Voltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage V S D, B ody Diode F orward V oltage (V ) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T G 8211 2400 V G S , G ate to S ource V oltage (V ) 5 4 3 2 1 0 0 3 6 9 12 15 18 21 24 Qg, T otal G ate C harge (nC ) 2000 C is s C , C apacitance (pF ) VDS =10V ID=5A 1600 1200 800 C os s 400 0 C rs s 6 0 5 10 15 20 25 30 V DS , Drain-to S ource Voltage (V ) F igure 9. C apacitance F igure 10. G ate C harge ID, Drain C urrent (A) S witching T ime (ns ) 10 S (O N) L im it 600 50 100 60 10 10 RD T D (o ff) Tr Tf T D (on) 10 ms 0m 1 DC 1s s 1 1 V DS =10V ,ID=1A VGS= 4 V 0.1 0.03 VGS =10V S ingle P ulse T A=25 C 0.1 1 10 30 50 6 10 60 100 300 600 R g, G ate R es is tance ( W ) V DS , Drain-S ource V oltage (V ) F igure 11.s witching characteris tics F igure 12. Maximum S afe O perating Area 5 S T G 8211 V DD ton toff tr 90% 5 VG S R GE N V IN D G RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D 90% S V IN 50% 10% 50% P ULS E WIDTH F igure 13. S witching T es t C ircuit F igure 14. S witching Waveforms 2 r(t),Normalized E ffective T ransient T hermal Impedance 1 Duty C ycle=0.5 0.2 0.1 0.1 0.05 0.02 S ingle P uls e 0.01 10 -4 P DM t1 1. 2. 3. 4. 10 -2 t2 R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 10 100 10 -3 10 -1 1 S quare Wave P uls e Duration (s ec) F igure 15. Normalized T hermal T rans ient Impedance C urve 6 S T G 8211 7 S T G 8211 TSSOP-8 Tape and Reel Data TSSOP-8 Carrier Tape UNIT : P PACKAGE TSSOP 8 A0 6.08 B0 4.40 K0 1.60 D0 r1.50 + 0.1 - 0.0 D1 r1.50 + 0.1 - 0.0 E 12.00 O 0.3 E1 1.75 E2 5.50 O 0.05 P0 8.00 P1 4.00 P2 2.00 O0.05 T 0.30 O0.05 TSSOP-8 Reel UNIT : P TAPE SIZE 12 P REEL SIZE r330 M 330 N 100 W 12.5 W1 16.0 H r13.0 + 0.5 - 0.2 K 10.6 S 2.0 O0.5 G R V 8 |
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